| PART |
Description |
Maker |
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
| IRS20124STRPBF IRS20124SPBF |
Digital Audio Driver with Discrete Deadtime and Protection
|
International Rectifier
|
| DMP210DUFB4-7 DMP210DUFB4-7B |
Discrete - MOSFETs - MOSFET Master Table - P Channel - P Channel 20V
|
Diodes
|
| IXTT110N10P IXTQ110N10P |
Discrete MOSFETs: Standard N-channel Types
N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXTH24N50Q IXTT24N50Q |
Discrete MOSFETs: Standard N-channel Types
N-Channel Enhancement Mode
|
IXYS Corporation
|
| IXTK100N25P IXTQ100N25P IXTT100N25P |
Discrete MOSFETs: Standard N-channel Types
PolarHT Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| IXTH30N50 |
MegaMOS FET 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS Corporation
|
| DTA143XE |
Discrete Devices-Transistor-PNP Digital Transistor
|
Taiwan Semiconductor
|
| DTA123YM |
Discrete Devices-Transistor-PNP Digital Transistor
|
Taiwan Semiconductor
|
| DTC123YE |
Discrete Devices-Transistor-NPN Digital Transistor
|
Taiwan Semiconductor
|
